CMOS memory evoiution 互补金属氧化半导体记忆演变
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A fast access time is achieved by using six-transistor CMOS memory cell, latched sense amplifier, and high-speed decoder circuit.
存储器采用六管CMOS存储单元、锁存器型敏感放大器和高速译码电路,以期达到最快的存取时间。
This paper introduced the realization procedure of IDD spectrum graphics. Test and experiment data proved that CMOS memory IDD spectrum graphics test is work.
通过对CM OS存储器idd频谱图形测试过程的介绍,测试及试验数据证实CM OS存储器idd频谱图:形测试是可行的。
Generally, this memory is called CMOS, although it's not strictly required that it actually be implemented using that technology.
通常来说,这种内存都称为CMOS,尽管它们并非严格要求使用这种技术来实现。
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